Strain-induced modulation on phonon and electronic properties of suspended black phosphorus field effect transistor

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• 作者：Bo Zheng^a ; Naichao Si^a ; Guoxin Xie^b ; ^{xgx2014@tsinghua.edu.cn} ; Quan Wang^c ; ^{wangq@mail.ujs.edu.cn}
• 关键词：Black phosphorus ; Field effect transistor ; Strain ; Suspended
• 刊名：Physics Letters A
• 出版年：2017
• 出版时间：26 February 2017
• 年：2017
• 卷：381
• 期：8
• 页码：792-795
• 全文大小：865 K
• 卷排序：381

文摘

Ag1, B2g and Ag2 peaks of black phosphorus sheet shift 1.5 cm−1, 1.0 cm−1 and 1.0 cm−1 to lower wavenumbers, respectively. The drain current modulation of black phosphorus field effect transistor on hole side and electric side is found to be ∼7.6×103∼7.6×103 and ∼57, respectively. The carrier mobility of black phosphorus field effect transistor is increased because of the effect of tensile strain.