The effects of degeneracy of the carrier ensemble on the energy loss rate and the high field mobility characteristics under the conditions of low lattice temperatures

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• 作者：A. Basu ; B. Das ; T.R. Middya ; D.P. Bhattacharya ; ^{d_p_bhattacharya@rediffmail.com}
• 关键词：Semiconductors ; Non-linear transport ; Electron energy loss ; Mobility
• 刊名：Physica B: Condensed Matter
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：506
• 期：Complete
• 页码：65-68
• 全文大小：464 K
• 卷排序：506

文摘

The rate of loss of energy of the non-equilibrium electrons to the acoustic mode lattice vibration in a degenerate semiconductor is obtained under the condition, when the lattice temperature is low enough, so that the traditional approximations like the elastic nature of the electron-phonon collisions and the truncation of the phonon distribution to the equipartition law are not valid any more. Using the results of the energy loss rate, the non-ohmic mobility is then calculated. Evaluating the loss rate and the non-ohmic mobility in degenerate samples of Si and Ge we find that significant changes in both the characteristics have been effected compared to that in the non-degenerate samples, in the regime of lower energy and for relatively lower fields. The effected changes are more significant the lower the lattice temperature is.