Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

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• 作者：Bo Wen Jia ; ^{jiab0001@e.ntu.edu.sg} ; Kian Hua Tan ; Wan Khai Loke ; Satrio Wicaksono ; Soon Fatt Yoon
• 关键词：Epitaxial growth ; Surface reconstruction ; AFM ; Reciprocal space map ; TEM ; Hall measurement
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：31 March 2017
• 年：2017
• 卷：399
• 期：Complete
• 页码：220-228
• 全文大小：2473 K
• 卷排序：399

文摘

Low-defected GaSb and InSb were grown on GaAs by MBE using interfacial misfit dislocations. X-ray reciprocal space mapping can be used to characterize misfit dislocations at the III-Sb/GaAs interface. Uniform interfacial misfit dislocation array were observed by TEM and x-ray RSM. (2 × 8) pre-growth Sb reconstruction promoted the formation of 90° misfit dislocations at the III-Sb/GaAs interface. The electron mobility in GaSb and InSb layers on GaAs can be enhanced through optimizing pre-growth Sb reconstruction.