Dislocation network driven structural relaxation in hematite thin films

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• 作者：A. Barbier ; O. Bezencenet ; C. Mocuta ; J.-B. Moussy ; H. Magnan ; N. Jedrecy ; M.-J. Guittet ; M. Gautier-Soyer
• 关键词：Surface X-ray diffraction ; Hematite ; Relaxation ; Dislocation network
• 刊名：Materials Science and Engineering: B
• 出版年：2007
• 出版时间：25 November 2007
• 年：2007
• 卷：144
• 期：1-3
• 页码：19-22
• 全文大小：719 K

文摘

Using surface X-ray diffraction, we investigated 20 nm thick -Fe₂O₃(0 0 0 1) thin films deposited on -Al₂O₃(0 0 0 1) and Pt(1 1 1) single crystals. The films were grown in identical conditions by atomic oxygen assisted molecular beam epitaxy techniques. Both substrates offer close lattice parameter misfits. On sapphire an isostructural epitaxial relationship is observed and a 30° in plane rotation of the lattice for Pt(1 1 1). The crystalline quality of the film deposited on Pt(1 1 1) is much better and contained less parasitic contributions. The improved crystalline quality of -Fe₂O₃(0 0 0 1) layers on Pt(1 1 1) is attributed to the presence of a very well ordered interfacial dislocation network which is missing when -Al₂O₃ is used as substrate.