Hot-carrier reliability on the optical characteristics of gate stack gate all-around (GSGAA) MOSFET considering quantum mechanical effects

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• 作者：M. Madheswaran^a ; R. Ramesh^b ; ^{ramesh24.dr@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; K. Kannan^c
• 关键词：GSGAA MOSFET ; Interfacial traps ; Optical characteristics ; Liebmann's iteration method
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：127
• 期：5
• 页码：2694-2702
• 全文大小：1088 K

文摘

In this paper, a 2D numerical modeling of hot-carrier effects on the optical characteristics of a gate stack gate all-around (GSGAA) MOSFET has been developed and presented. The device characteristics are obtained from the self-consistent solution of 2D Poisson – Schrödinger equation using Liebmann's iteration method. The drain and transfer characteristics, surface potential, electric field, and transconductance of the device have been estimated. The other optical characteristics such as photocurrent, responsivity of the GSGAA MOSFET structure with and without hot-carriers have also been discussed. The numerical results are validated with ATLAS TCAD simulation results of the device under dark condition. The model is purely a physics based one and overcomes the major limitations of the existing models by providing more accurate results.