FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies
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- 作者：Shushanik Karapetyan ; Shushan.Karapetyan@tum.de" class="auth_mail" title="E-mail the corresponding author ; Veit Kleeberger Kleeberger@tum.de" class="auth_mail" title="E-mail the corresponding author ; Ulf Schlichtmann Ulf.Schlichtmann@tum.de" class="auth_mail" title="E-mail the corresponding author
- 关键词：FinFET ; Process variations ; Reliability ; TDDB
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：61
- 期：Complete
- 页码：30-34
- 全文大小：784 K
文摘
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We have performed automatic discrete nominal sizing of 14nm FinFET-based logic cells
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The impact of global and local process variations on logic cells for FinFETs using TCAD and PTM models has been studied
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The influence of TDDB on cell performance has been studied