Boron doping effects on the electronic structure of normal and superconductor carbon nanotubes

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• 作者：Ali Fathalian ; Shi Xue Dou ; Rostam Moradian
• 关键词：Carbon nanotubes ; Superconductivity
• 刊名：Physica B
• 出版年：2010
• 出版时间：15 February 2010
• 年：2010
• 卷：405
• 期：4
• 页码：1125-1129
• 全文大小：265 K

文摘

Effects of boron doping on the electronic structures of normal and superconductor single walled carbon nanotubes (SWCNTs) are investigated. For the normal case we found that by increasing boron concentration the semiconducting energy gap, E_g, decreases. For the superconductor case the critical temperature is decreased by increasing the boron doping concentration.