文摘
Wear of fixed abrasive diamond wire affects the quality of sliced silicon wafers, necessitating replacement of the costly wire. This paper analyzes the effect of wire wear on the surface morphology, roughness, and subsurface damage of as-cut single crystal silicon wafers. Scanning electron microscopy, Raman spectroscopy, confocal microscopy, focused ion beam machining (FIB), and biaxial flexure are used to evaluate the surface morphology, areal surface roughness, and subsurface damage (cracks). Results show that, with increased wire wear, the wafers exhibit greater evidence of ductile removal, lower surface roughness, fewer but slightly deeper subsurface cracks, and lower average fracture strength.