文摘
A new multi-channel MOSFET (MC-MOSFET) is proposed on InGaAs/Al2O3. The proposed device provides 6.79 times higher drain current as compared to the conventional planar MOSFET (CP-MOSFET). MC-MOSFET offers 5.57 times increase in peak transconductance, higher transconductance-to-drain current ratio and higher intrinsic voltage gain. MC-MOSFET exhibits smaller SS (72 mV/dec) than CP-MOSFET (81 mV/dec), and the DIBL of MC-MOSFET is 86 mV/V as compared to 176 mV/V of the CP-MOSFET. The proposed structure shows 2.5 times improvement in cut-off frequency, 15.85% higher maximum frequency of oscillation as compared to the CP-MOSFET.