High performance multi-channel MOSFET on InGaAs for RF amplifiers

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• 作者：Manoj Singh Adhikari ; ^{manoj.space99@gmail.com} ; Yashvir Singh
• 关键词：InGaAs ; MOSFET ; Transconductance ; Cut-off frequency
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：79-87
• 全文大小：710 K
• 卷排序：102

文摘

A new multi-channel MOSFET (MC-MOSFET) is proposed on InGaAs/Al2O3. The proposed device provides 6.79 times higher drain current as compared to the conventional planar MOSFET (CP-MOSFET). MC-MOSFET offers 5.57 times increase in peak transconductance, higher transconductance-to-drain current ratio and higher intrinsic voltage gain. MC-MOSFET exhibits smaller SS (72 mV/dec) than CP-MOSFET (81 mV/dec), and the DIBL of MC-MOSFET is 86 mV/V as compared to 176 mV/V of the CP-MOSFET. The proposed structure shows 2.5 times improvement in cut-off frequency, 15.85% higher maximum frequency of oscillation as compared to the CP-MOSFET.