Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology

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• 作者：D. Boudier^a ; ^{dimitri.boudier@ensicaen.fr} ; B. Cretu^b ; E. Simoen^c ; R. Carin^a ; A. Veloso^c ; N. Collaert^c ; A. Thean^c
• 关键词：Triple-gate ; FinFET ; Low frequency noise ; 1/f noise ; Generation-recombination ; Traps
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：102-108
• 全文大小：1463 K
• 卷排序：128

文摘

The transfer characteristic at room temperature of FinFETs processed for sub-10 nm technologies could always be explained by solving Poisson equation throughout the channel – dielectric interface. Various methods for the MOSFET parameters estimation are proposed in the literature. In this paper, the electrical parameters extraction technique based on the Y-function methodology is reminded.Low frequency noise is presented considering three major noise sources: 1/f noise associated to carrier trapping-detrapping in the gate oxide, channel carrier mobility fluctuations and generation-recombination noise related to traps located in the depletion zone of the device. Theory and methodology in order to identify the 1/f noise mechanism and to have information of the process induced traps in the silicon film using the noise spectroscopy technique are revisited.