Grain boundary complexion transitions in WO3- and CuO-doped TiO2 bicrystals
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文摘
Several grain boundary complexions (grain boundary interfacial phases) have been identified in TiO2 bicrystals by high-resolution transmission electron microscopy (TEM) and aberration-corrected scanning TEM (STEM). An intrinsic grain boundary with no apparent impurity segregation was observed in an undoped TiO2 bicrystal. In a WO3-doped TiO2 bicrystal, WO3 second-phase particles formed along the boundary, with a nominally clean, intrinsic-type grain boundary in between the particles. In a CuO-doped bicrystal, a remarkable series of three distinct grain boundary complexions with abrupt structural transitions was discovered coexisting at the grain boundary, and the existence of a fourth equilibrium complexion at the annealing temperature was implied. Thus, the WO3- and CuO-doped TiO2 bicrystals exhibit dramatically different solute partitioning behavior which can be understood in terms of the relative interphase boundary energies of these two systems. STEM-electron energy loss spectroscopy and energy-dispersive X-ray spectroscopy analysis of the nanoscale lens-shaped films of amorphous material in the CuO-doped TiO2 bicrystal demonstrated an excess of CuO, as expected, yet also revealed the unintentional presence of SiOx. The multiple grain boundary complexions in CuO-doped TiO2 offer an explanation for the CuO-enhanced grain growth and sintering of TiO2 that has been reported in the literature. Conversely, the intrinsic grain boundary complexion observed in WO3-doped TiO2 is consistent with previous work showing that WO3 has no effect on grain boundary mobility in TiO2. A phenomenological thermodynamic model is proposed to explain the physical origin of these observed grain boundary complexions and the abrupt, first-order complexion transitions that are believed to occur upon cooling of the CuO-doped TiO2 bicrystal.

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