Surface reconstructions on GaAs(001)

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• 作者：Akihiro Ohtake
• 关键词：GaAs(001) surface ; Reconstruction ; Scanning tunneling microscopy ; Reflection high-energy electron diffraction ; Reflectance difference spectroscopy
• 刊名：Surface Science Reports
• 出版年：2008
• 出版时间：15 July 2008
• 年：2008
• 卷：63
• 期：7
• 页码：295-327
• 全文大小：8881 K

文摘

This paper reviews the recent experimental findings on the atomic structures on the (001) surface of GaAs. We systematically studied the structure and composition of the GaAs(001) surfaces using reflection high-energy electron diffraction, reflectance difference spectroscopy, scanning tunneling microscopy, and X-ray photoelectron spectroscopy. We found that the As-rich c(4×4)β, c(4×4), and (2×4), and Ga-rich (6×6), c(8×2), and (4×6) reconstructions are formed on the GaAs(001) surface critically depending on the preparation conditions. Atomic structures on these reconstructions will be discussed on the basis of the recent findings of experiments and first-principles calculations.