Study on the resistive switching properties of epitaxial La_0.67Sr_0.33MnO₃ films

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• 作者：Lina Huang ; Bingjun Qu ; Litian Liu ; Liuwan Zhang
• 关键词：A. La_0.67Sr_0.33MnO₃ ; A. Thin film ; D. Resistive switching ; E. Electric-pulse-induced
• 刊名：Solid State Communications
• 出版年：2007
• 出版时间：August 2007
• 年：2007
• 卷：143
• 期：8-9
• 页码：382-385
• 全文大小：403 K

文摘

The hysteretic and reversible polarity-dependent resistive switching effect has been studied in epitaxial La_0.67Sr_0.33MnO₃ (LSMO) films under DC bias stress and voltage pulses. A distinct current–voltage characteristic of the Ag/LSMO system with pronounced nonlinearity, asymmetry and hysteresis was observed, which is considered to be a precursor sign of the resistance switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were provided. Reproducible switching properties, involving non-symmetrical R–V hysteresis loop, active pulse width window and stepwise multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile memory applications.