An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes

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• 作者：S. Rao ; ^{sandro.rao@unirc.it} ; G. Pangallo ; F.G. Della Corte
• 关键词：Terms&mdash ; Schottky diodes ; p-i-n diodes ; power semiconductor devices ; sensors silicon carbide ; temperature sensors ; wide band gap semiconductors
• 刊名：Procedia Engineering
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：168
• 期：Complete
• 页码：729-732
• 全文大小：175 K
• 卷排序：168

文摘

The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperature.