Characteristics of ZnO¤RV₂O₅¤RMnO₂¤RNb₂O₅¤REr₂O₃ semiconducting varistors with sintering processing

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• 作者：Choon-Woo Nahm ; ^{cwnahm@deu.ac.kr}
• 关键词：Oxide semiconductors ; Microstructure ; Electrical properties ; Dielectric properties ; Varistors
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2013
• 出版时间：June, 2013
• 年：2013
• 卷：16
• 期：3
• 页码：778-785
• 全文大小：802 K

文摘

The effects of sintering temperature on the microstructure, electrical properties, and dielectric characteristics of ZnO¤RV₂O₅¤RMnO₂¤RNb₂O₅¤REr₂O₃ semiconducting varistors have been studied. With increase in sintering temperature the average grain size increased (4.5-9.5 ¦Ìm) and the density decreased (5.56-5.45 g/cm³). The breakdown field decreased with an increase in the sintering temperature (6214-982 V/cm). The samples sintered at 900 ¡ãC exhibited remarkably high nonlinear coefficient (50). The donor concentration increased with an increase in the sintering temperature (0.60¡Á10¹⁸-1.04¡Á10¹⁸ cm^?3) and the barrier height exhibited the maximum value (1.15 eV) at 900 ¡ãC. As the sintering temperature increased, the apparent dielectric constant increased by more than four-fold.