Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process

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• 作者：Norio Hirashita ; Shu Nakaharai ; Yoshihiko Moriyama ; Koji Usuda ; Tsutomu Tezuka ; Naoharu Sugiyama ; Shin-ichi Takagi
• 关键词：SiGe ; Ge condensation ; Plastic deformation ; Multiple slips ; Microtwin ; Double-cross-slip mechanism
• 刊名：Thin Solid Films
• 出版年：2008
• 出版时间：3 November 2008
• 年：2008
• 卷：517
• 期：1
• 页码：407-411
• 全文大小：892 K

文摘

Plastic deformation in (001) SiG-on-insulator (SGOI) substrates during Ge condensation has been studied with emphasis on planar defect formation. Multiple slip deformation is found to be a dominant mode of the plastic deformation during the condensation toward Ge-rich SGOI substrates and to form stacking faults associated with Lomer–Cottrell dislocations for Ge composition higher than approximately 0.4. The multiple slip bands are also found to be a homogeneous slip line consisting of successive slips of lattice plane and/or deformation twinning of {111} bands. The double cross-slip mechanism is responsible not only for the slip deformation but also for deformation twinning during the condensation.