On the emitter formation in nanotextured silicon solar cells to achieve improved electrical performances
详细信息 查看全文
- 作者：Bishal Kaflea ; bishal.kafle@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Jonas Schö ; na ; Christoph Fleischmanna ; Sabrina Wernera ; Andreas Wolfa ; Laurent Clochardb ; Edward Duffyb ; Marc Hofmanna ; Jochen Rentscha
- 关键词：Atmospheric pressure ; Black silicon ; Dry etching ; Multicrystalline silicon ; Nanotexture ; Process simulation ; Solar cells ; Electron beam induced current (EBIC) ; Junction depth
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：152
- 期：Complete
- 页码：94-102
- 全文大小：1970 K
文摘
- •
Nanotexture in multicrystalline silicon formed by a plasma-less dry etching process.
- •
Formation of n-type emitter investigated by 3D simulations and characterizations.
- •
High phosphorous concentration is present near the surface region of nanostructure.
- •
Formation of a deep and relatively planar p–n junction beneath the nanostructures.
- •
Deposition temperature and O2 flux have determining effect on emitter properties.