Plasma-free Dry-chemical Texturing Process for High-efficiency Multicrystalline Silicon Solar Cells

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• 作者：Bishal Kafle^a ; ^{bishal.kafle@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author} ; Timo Freund^a ; Abdul Mannan^a ; Laurent Clochard^b ; Edward Duffy^b ; Sabrina Werner^a ; Pierre Saint-Cast^a ; Marc Hofmann^a ; Jochen Rentsch^a ; Ralf Preu^a
• 关键词：black silicon ; atmospheric pressure ; dry texturing ; silicon nitride ; surface passivation ; emitter recombination
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：359-368
• 全文大小：684 K

文摘

In this paper, we study the influence of modifying the geometry of nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification process is developed that allows low surface recombination velocities (Seff,min ≤ 10 cm/s) on nanotextured surfaces. By simultaneously improving the surface passivation and the emitter diffusion processes, we achieve an equivalent passivation level (VOC,impl ≥ 670 mV) for nanotextured surfaces to that of reference textured surfaces after applying either PECVD or ALD based deposition techniques.