Effect of buffer layer deposition on diameter and alignment of carbon nanotubes in water-assisted chemical vapor deposition

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• 作者：Shashikant P. Patole^a ; ^b ; ¹ ; ^{sppatole@skku.edu} ; Jae-Hun Jeong^a ; ¹ ; Seong Man Yu^b ; Ha-Jin Kim^c ; Jae-Hee Han^d ; In-Taek Han^c ; Ji-Beom Yoo^a ; ^b ; ^{jbyoo@skku.edu}
• 关键词：Carbon nanotubes ; Buffer layer ; Catalyst ; Surface topography ; Growth mechanism
• 刊名：Applied Surface Science
• 出版年：2013
• 出版时间：15 April, 2013
• 年：2013
• 卷：271
• 期：Complete
• 页码：32-38
• 全文大小：1870 K

文摘

Vertically aligned carbon nanotubes (CNTs) grown by water-assisted chemical vapor deposition have revealed differences in structure and morphology depending on the deposition rate of the Al buffer layer. Rearrangement of the Fe catalyst during CNT growth is mainly influenced by the buffer layer topography, which in turn depends on the buffer layer deposition rate. A higher deposition rate makes the substrate rougher and causes the growth of more aligned, low diameter CNTs with greater height. In contrast, slow deposition results in a smooth surface, which grows misaligned, large diameter CNTs with less height. Based on the results, a CNT growth model has been proposed.