e-beam irradiation effects on IR absorption bands in single-walled carbon nanotubes

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• 作者：Masao Ichida^a ; ^{ichida@konan-u.ac.jp} ; Katsunori Nagao^a ; Yuka Ikemoto^b ; Toshiya Okazaki^c ; Yasumitsu Miyata^d ; Akira Kawakami^e ; Hiromichi Kataura^c ; Ikurou Umezu^a ; Hiroaki Ando^a
• 关键词：A. Single-walled carbon nanotubes ; D. Plasmon resonance ; E. IR absorption spectra
• 刊名：Solid State Communications
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：250
• 期：Complete
• 页码：119-122
• 全文大小：477 K
• 卷排序：250

文摘

High purity semiconducting and metallic single-walled carbon nanotubes (SWNTs) films. Broad Infrared (IR) absorption bands are observed below 0.5 eV for both samples. By the irradiation of e-beam on SWNTs thin films, the intensity of defect related Raman band increase, and the peak energy of IR absorption bands shift to the higher energy side. These results indicate that the origin of infrared band is due to the optical resonance of finite-length SWNT which is determined by the defect density.