Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

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• 作者：M. Najmzadeh ; K. Boucart ; W. Riess ; A.M. Ionescu
• 关键词：Tunnel FET ; Band-to-band tunneling ; Local lateral uniaxial tensile strain ; Asymmetric strain profile ; Local strain engineering ; Local band-gap modulation ; Subthreshold swing ; Scaling ; Multi-gate ; Si nanowires
• 刊名：Solid-State Electronics
• 出版年：2010
• 出版时间：September 2010
• 年：2010
• 卷：54
• 期：9
• 页码：935-941
• 全文大小：954 K

文摘

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and I_on/I_off characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the BTB source junction could act as an optimized performance Tunnel FET enabling the cancellation of the drain threshold voltage. To implement a real device, we demonstrate using GAA Si NW with asymmetric strain profile using two local stressor technologies to have >4–5 GPa peak of lateral uniaxial tensile stress in the Si NW.