Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications

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• 作者：F. Wessely ; ^{wessely@iht.tu-darmstadt.de} ; T. Krauss ^{krauss@iht.tu-darmstadt.de} ; U. Schwalke ^{schwalke@iht.tu-darmstadt.de}
• 关键词：Silicon nanowire ; Multi-gate ; Midgap Schottky-barrier ; Dopant-free ; Robustness against high temperature
• 刊名：Solid-State Electronics
• 出版年：2012
• 出版时间：August, 2012
• 年：2012
• 卷：74
• 期：Complete
• 页码：91-96
• 全文大小：1048 K

文摘

In this paper we report on a newly developed nanowire based field-effect device-architecture feasible for the use in high temperature environments. This nanowire field-effect-transistor (NWFET) is virtually undoped and therefore the device type (i.e. P-type or N-type) can be selected by the application of an appropriate bias to a second gate, namely the back-gate, enabling an additional degree of freedom in logic design. Moreover, the presented devices exhibit low OFF-state currents, even at elevated temperatures, making low-power applications attainable with today¡¯s conventional silicon (and SOI) CMOS technology. By changing the source/drain bias-polarity, electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific logic application.