Electrodeless dielectrophoretic concentrator for analyte pre-concentration on poly-silicon nanowire field effect transistor

详细信息    查看全文

• 作者：Srinivasu Valagerahally Puttaswamy^aAuthor Vitae ; Chih-Heng Lin^bAuthor Vitae ; Shilpa Sivashankar^aAuthor Vitae ; Yuh-Shyong Yang^b ; ^{ysyang@faculty.nctu.edu.tw}Author Vitae ; Cheng-Hsien Liu^a ; ^{liuch@pme.nthu.edu.tw}Author Vitae
• 关键词：FET biosensors ; iDEP ; Sensitivity ; Maskless photolithography
• 刊名：Sensors and Actuators B: Chemical
• 出版年：2013
• 出版时间：1 March, 2013
• 年：2013
• 卷：178
• 期：Complete
• 页码：547-554
• 全文大小：1328 K

文摘

The sensitivity of biosensors can be affected by mass transport limitations as a result of miniaturization. To enhance signal sensitivity, pre-concentration of deoxyribonucleic acid (DNA), in the vicinity of the sensing elements of n-type polycrystalline silicon nanowire field effect transistor (Poly-Si NWFET) is demonstrated using a microfluidic device based on insulator or gradient dielectrophoresis (iDEP) to overcome mass transport limitations. In insulator-based dielectrophoresis (iDEP), insulating microstructures produce non-uniform electric fields to drive dielectrophoresis (DEP) in microsystems. Fabrication of accurately controlled three-dimensional (3D) microstructure of poly (ethylene glycol) diacrylate (PEG-DA) with a narrow microchannel using maskless gray-scale lithography is described. The fabrication of three-dimensional structures at low cost with saving time is accomplished by the use of maskless exposure system. PEG-DA has been used due to its excellent biocompatibility and ease of fabrication. To enhance the stability of PEG-DA, we added another polymer pentaerythritol tetraacrylate (PETA). Electrical property of the Poly-Si NWFET is ensured by plotting I-V_G curve after the integration of iDEP micro device.