Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

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• 作者：Frank Wessely ; Tillmann Krauss ; Udo Schwalke
• 关键词：Midgap Schottky-barrier ; Multi-gate ; (Multi-) SOI ; Silicon nanowire ; Virtually dopant-free
• 刊名：Microelectronics Journal
• 出版年：December, 2013
• 年：2013
• 卷：44
• 期：12
• 页码：1072-1076
• 全文大小：718 K

文摘

In this paper we report on a newly developed multi-gate nanowire-field-effect device (NWFET) in which the transistor type (i.e. PMOS and NMOS) is freely selectable by the application of a control-voltage. This significantly adds to flexibility in design of integrated circuits and their fabrication, respectively. We will show, that the use of midgap Schottky-barrier source and drain contacts are the key enabler for this device concept to be functional. A fully functional freely configurable CMOS-NWFET inverter circuit is presented, demonstrating the capability of this SOI technology platform. All this makes the presented NWFET-technology suitable for the fabrication multi-purpose devices for many applications.