A simplified reaction model and numerical analysis for Si deposition from the SiHCl3-H2 system in vertical rotating disk reactors
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- 作者：Soichiro Makino ; makino@tytlabs.co.jp" class="auth_mail" title="E-mail the corresponding author ; Masahide Inagaki ; Kenji Nakashima ; Takahiro Kozawa ; Nariaki Horinouchi
- 关键词：A1. Fluid flows ; A1. Growth models ; A1. Heat transfer ; A1. Mass transfer ; A3. Chemical vapor deposition processes ; B2. Semiconducting silicon
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 November 2016
- 年：2016
- 卷：454
- 期：Complete
- 页码：156-163
- 全文大小：3436 K
文摘
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Development of a new simplified reaction model for Si deposition.
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Recirculation of by-product HCl can be observed when inlet rate is insufficient.
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Such recirculating flow cases non-uniform Si deposition in VRD reactor.
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The new reaction model enables accurate prediction of the non-uniform Si deposition.