Light regulated I-V hysteresis loop of Ag/BiFeO₃/FTO thin film

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• 作者：Lujun Wei ; Bai Sun ; Wenxi Zhao ; Hongwei Li ; Peng Chen ; ^{pchen@swu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：BiFeO3 nanoribbons ; Ag/BiFeO3/FTO ; Hysteresis loop ; Current&ndash ; voltage characteristics
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：30 January 2017
• 年：2017
• 卷：393
• 期：Complete
• 页码：325-329
• 全文大小：1378 K

文摘

A hysteresis loop of current–voltage characteristics based multiferroic BiFeO₃ nanoribbons memory device is observed. Moreover, the white-light can greatly regulate both the current–voltage hysteresis loop and the ferroelectric hysteresis loop. The stored space charges within the electrodes/BiFeO₃ interface can lead to hysteresis-type I–V characteristics of Ag/BiFeO₃/FTO devices. The white-light controlled I–V loop and ferroelectric loop result from photon-generated carries. Since the I–V hysteresis loop and ferroelectric hysteresis loop have a potential application prospect to the memory devices, these two white-light controlled the hysteresis loops curves are likely to provide promising opportunity for developing the multi-functional memory devices.