Hexagonal CdTe films with Te excess grown at room temperature by laser ablation

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• 作者：F. de Moure-Flores^a ; ^{fcomoure@hotmail.com} ; J.G. Quiñ ; ones-Galvá ; n^b ; A. Guill&#233 ; n-Cervantes^b ; J. Santoyo-Salazar^b ; A. Herná ; ndez-Herná ; ndez^b ; G. Contreras-Puente^a ; M. de la L. Olvera^c ; M. Mel&#233 ; ndez-Lira^b
• 关键词：Laser ablation ; CdTe hexagonal ; CdTe films ; Te excess
• 刊名：Materials Letters
• 出版年：2013
• 出版时间：1 February, 2013
• 年：2013
• 卷：92
• 期：Complete
• 页码：94-95
• 全文大小：208 K

文摘

CdTe thin films were grown by laser ablation using a Nd:YAG laser at wavelengths of 1064 nm and 532 nm, on Corning glass substrates at room temperature. CdTe powders were used as target for deposition of the films. The growth time was 10 min and the films were deposited in vacuum. X-ray diffraction shows that films have hexagonal phase. EDS analysis indicates that the films grew with excess of Te, which indicates that CdTe films have p-type conductivity.