Magnetocrystalline anisotropy of pure magnetic semiconductors of MnGeP2 and MnGeAs2: A first-principles study
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- 作者：Gi-Beom Cha ; gbcha@mail.ulsan.ac.kr" class="auth_mail" title="E-mail the corresponding author ; Won Seok Yun ; wonseok.yun@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Soon Cheol Hong ; schong@ulsan.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Magnetic semiconductor ; First-principles calculation ; Magnetocrystalline anisotropy ; Electronic structure
- 刊名：Journal of Magnetism and Magnetic Materials
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：419
- 期：Complete
- 页码：202-209
- 全文大小：4658 K
文摘
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Magnetisms of MnGeP2 and MnGeAs2 are investigated using the FLAPW method.
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An antiferromagnetic state is ground for each of MnGeP2 and MnGeAs2.
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MnGeP2 and MnGeAs2 exhibit magnetization along the z axis in their antiferromagnetic states.
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MnGeP2 and MnGeAs2 exhibit magnetization on the xy plane in their ferromagnetic states.