Nature of electrical transport properties of nanocrystalline ZnIn₂Se₄ thin films

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• 作者：M.M. El-Nahass ; A.A. Attia ; H.A.M. Ali ; ^{hend2061@yahoo.com} ; G.F. Salem ; M.I. Ismail
• 关键词：ZnIn2Se4 thin films ; Atomic force microscope ; Electrical transport properties ; Conduction mechanisms
• 刊名：Chaos, Solitons & Fractals
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：95
• 期：Complete
• 页码：52-56
• 全文大小：1321 K
• 卷排序：95

文摘

Annealed film of ZnIn2Se4 has a homogenous nature with smaller roughness. ZnIn2Se4 film showed conduction mechanisms with ΔE1 = 0.44 eV and ΔE2 = 0.65 eV. Thermoelectric measurements showed a n-type polarity of ZnIn2Se4 thin films. J–V characteristics for Al/ZnIn2Se4/Al structure reveals three distinct regions. The trap-filled-limited voltage (VTFL) decreased with increasing temperature.