Lifetime estimation of SiC MOSFETs under high temperature reverse bias test
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- 作者：Kosuke Uchida ; uchida-kosuke@sei.co.jp" class="auth_mail" title="E-mail the corresponding author ; Toru Hiyoshi ; Taro Nishiguchi ; Hirofumi Yamamoto ; Masaki Furumai ; Takashi Tsuno ; Yasuki Mikamura
- 关键词：SiC ; MOSFETs ; Reliability ; Lifetime ; HTRB ; Oxide electric field
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：64
- 期：Complete
- 页码：425-428
- 全文大小：705 K
文摘
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This paper presents the method to estimate the lifetime of SiC DMOSFETs under HTRB.
Breakdown occurred at the gate oxide over the threading dislocation.
Lifetime is estimated by the dependence on the oxide electric field.
Doping concentration uniformity is the key parameter to decide the electric field.