Dependence of recovery of Si surface damaged by GCIB irradiation on annealing temperature

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• 作者：Hiromichi Isogai ; Eiji Toyoda ; Takeshi Senda ; Koji Izunome ; Kazuhiko Kashima ; Noriaki Toyoda ; Isao Yamada
• 关键词：Gas cluster ion beam ; Si(1 0 0) ; Amorphous Si ; Solid phase epitaxy ; Roughness ; Anneal
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2008
• 出版时间：May 2008
• 年：2008
• 卷：266
• 期：10
• 页码：2533-2536
• 全文大小：505 K

文摘

As semiconductor devices become progressively smaller, it is important that wafers are fabricated with extremely uniform thicknesses. Although, GCIB technology can be used for corrective etching of Si wafers with high accuracy, an amorphous Si (a-Si) layer is formed in the process by the collision of cluster ions with the Si surface. We have shown that the a-Si layer formed on Si surfaces by Ar-GCIB and SF₆-GCIB irradiation disappears completely and atomically smooth surfaces are formed after high-temperature annealing. In this study, the recovery of a surface damaged at various annealing temperatures was investigated in detail by TEM, AFM and SIMS. We found that the disappearance of the a-Si layer occurred by solid phase epitaxy (SPE) from low temperature and atomically smoothing at the surface occur by migration of Si atoms at high-temperature. Moreover, due to Ar-GCIB irradiation, Ar was found in high concentrations in the a-Si layer and crystal defects were formed on the surface after annealing. The Ar concentration on the Si surface could be decreased by irradiating SF₆-GCIB after Ar-GCIB irradiation.