Electroluminescence properties of In-doped Zn₂SiO₄ thin films prepared by sol-gel process

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• 作者：Hirotaka Ogawa ; Akinori Kan ; Norihiro Ikeda ; Akihiro Fujita
• 关键词：Electroluminescence ; Zn2SiO4 ; In doping ; Thin film ; Sol&ndash ; gel
• 刊名：Physica B
• 出版年：2012
• 出版时间：1 November, 2012
• 年：2012
• 卷：407
• 期：21
• 页码：4308-4312
• 全文大小：644 K

文摘

The effect of In doping on the electroluminescence (EL) properties of Zn₂SiO₄:In thin films was investigated. In-doped Zn₂SiO₄ thin films were deposited on BaTiO₃ substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn₂SiO₄ powders revealed a single phase of Zn₂SiO₄ for In concentrations up to approximately 1.5 mol % , whereas a secondary phase of In₂O₃ was observed for In concentrations in the range of 2-10 mol % . The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol % In was doped. The blue emission of In-doped Zn₂SiO₄ thin film may be related to the In substitution for Zn. The 2 mol % In-doped Zn₂SiO₄ thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.