Improved carrier balance and polarized in-plane light emission at full-channel area in ambipolar heterostructure polymer light-emitting transistors
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- 作者：Takahiro Ohtomo ; Kazuya Hashimoto ; Hitoshi Tanaka ; Yutaka Ohmori ; Masanori Ozaki ; Hirotake Kajii ; kajii@oled.eei.eng.osaka-u.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Polarized in-plane light emission ; Polymer light-emitting transistor ; Heterostructure ; Oriented fluorene-type polymer ; Ambipolar
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：32
- 期：Complete
- 页码：213-219
- 全文大小：2021 K
文摘
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Bilayer oriented films using ambipolar semiconducting polymers.
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Heterostructure polymer light-emitting transistors are fabricated.
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Hole and electron transport occur mainly along the different organic layers.
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Polarized in-plane light-emitting pattern is achieved.
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External quantum efficiency of 1.5% is achieved.