Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

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• 作者：Alessandro Grossi ; ^{alessandro.grossi@unife.it" class="auth_mail" title="E-mail the corresponding author} ; Cristian Zambelli ; Piero Olivo ; Enrique Miranda¹ ; Valeriy Stikanov² ; Christian Walczyk³ ; Christian Wenger³
• 关键词：RRAM array ; Forming ; Read window ; Energy saving
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：115
• 期：part_PA
• 页码：17-25
• 全文大小：1512 K

文摘

<dl class="listitem" id="list_l0005"><dt class="label">•dt><dd>

d="p0140">We compare different pulse-based forming techniques on 4 kbits RRAM arrays.

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d="p0145">We performed post-forming modeling during Reset operation.

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d="p0150">An Incremental Form and Verify technique (IFV) shown the best results.

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d="p0155">This technique narrows the read current distribution, reducing the switching voltage.

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d="p0160">This allows reducing cell-to-cell variability, switching time and energy.

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