Band structure and optical constants of GaAs_1-xN_x

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• 作者：N. Bouarissa^a ; ^{n_bouarissa@yahoo.fr} ; S.A. Siddiqui^b ; M. Boucenna^c ; M.A. Khan^d
• 关键词：Electronic structure ; Optical properties ; GaAsN alloys ; Pseudopotentials
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：131
• 期：Complete
• 页码：317-322
• 全文大小：721 K
• 卷排序：131

文摘

The composition dependence of direct and indirect band gap energies, anti-symmetric gap, valence band width, refractive index and high-frequency and static dielectric constants has been investigated for GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (x from 0 to 1). The calculations are mainly based on the pseudopotential approach within the virtual crystal approximation. The variation of band-gaps versus nitrogen content show important bowing parameters. Trends in ionicity have been discussed in terms of the anti-symmetric gap. The alloy concentration dependence of the optical parameters of interest is found to be highly nonlinear.