Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy ⁵⁶Fe ions

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• 作者：Belekar ; M.M. ; Narsale ; A.M. ; Arora ; B.M. ; Sukhatankar ; K.V. ; Dubey ; S.K. ; Salvi ; V.P.
• 关键词：71.55.Eq ; 72.80.Ey ; MeV ion implantation ; GaAs ; Fe ; Near and mid IR ; Radiation defects ; Annealing
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2004
• 出版时间：November, 2004
• 年：2004
• 卷：226
• 期：3
• 页码：301-308
• 全文大小：492 K

文摘

Single crystal GaAs substrates implanted with high-energy ⁵⁶Fe ions have been optically investigated before and after annealing, over the photon energy range 0.1aaa1.4eV. The spatial distribution of the damage has been probed by etching the sample and shows that defect density peaks at a depth of about 10aam. Annealing studies show that the mid gap defect states are annealed out more rapidly than the near band edge defect states during annealing up to 350aaC whereas the near band edge defect states are annealed out more rapidly than mid gap defect states during annealing between 350aaa600aaC. The fringe patterns observed in the transmission spectra have been analyzed to investigate quantitatively changes in the refractive index of the radiation-damaged region. KramersaaaKronig relation has been used to correlate the absorption due to damage with changes in the refractive index. The results show that the high-energy ion-implanted layer contained amorphous pockets.