Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

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• 作者：G.-F. Dalla Betta^a ; ^b ; ^{gianfranco.dallabetta@unitn.it" class="auth_mail" title="E-mail the corresponding author} ; G. Batignani^c ; ^d ; M.A. Benkechkache^b ; ^e ; S. Bettarini^c ; ^d ; G. Casarosa^c ; ^d ; D. Comotti^f ; ^g ; L. Fabris^g ; ^h ; F. Forti^c ; ^d ; M. Grassi^f ; ^g ; S. Latreche^e ; L. Lodola^f ; ^g ; P. Malcovati^f ; ^g ; M. Manghisoni^g ; ^h ; R. Mendicino^a ; ^b ; F. Morsani^d ; A. Paladino^c ; ^d ; L. Pancheri^a ; ^b ; E. Paoloni^c ; ^d ; L. Ratti^f ; ^g ; V. Re^g ; ^h ; G. Rizzo^c ; ^d ; G. Traversi^g ; ^h ; C. Vacchi^f ; ^g ; G. Verzellesi^b ; ⁱ ; H. Xu^a ; ^b
• 关键词：Silicon detectors ; Active edges ; Breakdown voltage ; TCAD simulations
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：11 July 2016
• 年：2016
• 卷：824
• 期：Complete
• 页码：384-385
• 全文大小：635 K

文摘

We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.