Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction

详细信息    查看全文

• 作者：Ari Bimo Prakoso^a ; ^b ; ^{ari001@e.ntu.edu.sg} ; Lin Ke^c ; Jianxiong Wang^a ; Zeyu Li^a ; ^b ; Changyun Jiang^c ; Rusli^a ; ^b ; ^{erusli@ntu.edu.sg}
• 关键词：Organic/inorganic hybrid device ; Heterojunction ; Reverse recovery transient ; p-n junction ; PEDOT ; PSS
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：42
• 期：Complete
• 页码：269-274
• 全文大小：1358 K
• 卷排序：42

文摘

We study the junction behavior of poly (3,4-ethylenedioxythiophene):polystyrenesulphonate/n-Si hybrid organic/inorganic heterojunction by reverse recovery transient (RRT) characterization. RRT response for PEDOT:PSS/n-Si hybrid junction is reported for various n-Si doping concentration and forward bias current injection level. The presence of settling time of 8.3–23.5 μs in the RRT response in contradiction to Schottky junction model commonly assumed for PEDOT:PSS/n-Si hybrid structure. The decrease in the minority carrier lifetime from 126.8 μs to 39.5 μs with increased n-Si doping concentration, suggests that minority carriers are stored at n-Si side of the junction, which is consistent with a p+-n junction model for the hybrid structure. The minority carrier lifetime is found to depend on forward bias current injection level, attributed to trap-saturation effect of the recombination-centers at the PEDOT:PSS/n-Si junction. The DC-IV characteristics of the PEDOT:PSS/n-Si hybrid junction are also consistent with the notion of diffusion and trap assisted recombination dominated dark current. The diffusion dominated transport of PEDOT:PSS/n-Si leads to an ideal p+-n junction behavior that leverages on the good transport properties of Si. Our findings are important in the modeling and optimization of the characteristics of electronic devices based on the organic/Si hybrid junction.