Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers
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- 作者：Hongquan Yanga ; Xiong Zhanga ; xzhang62@aliyun.com" class="auth_mail" title="E-mail the corresponding author ; Shuchang Wangb ; Yi Wanga ; Huakai Luana ; Qian Daia ; Zili Wua ; Jianguo Zhaoa ; Yiping Cuia
- 关键词：Si-doped AlGaN ; Polar ; Non-polar ; Strain relaxation ; Structural anisotropy
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：96
- 期：Complete
- 页码：1-7
- 全文大小：1893 K
文摘
- •
The non-polar
-oriented a-plane AlGaN epi-layers were grown by MOCVD.- •
Si-induced strain relaxation in the non-polar AlGaN epi-layers can be promoted.
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The crystal quality for both AlGaN epi-layers can be improved by Si-doping.
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Si-doping efficiency of AlGaN samples was degraded at SiH4 flow rate of 40 sccm.