Induced characteristics of n- and p-channel OFETs by the choice of solvent for the dielectric layer towards the fabrication of an organic complementary circuit
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- 作者：Lilian Soares Cardoso ; Josiani Cristina Stefanelo ; josiani@ifsc.usp.br" class="auth_mail" title="E-mail the corresponding author ; josiani.stefanelo@hotmail.com" class="auth_mail" title="E-mail the corresponding author ; Roberto Mendonç ; a Faria
- 关键词：Organic field-effect transistor ; P3HT ; PNDI2OD-T2 ; Dielectric solvent ; Organic complementary circuit ; Orthogonality
- 刊名：Synthetic Metals
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：220
- 期：Complete
- 页码：286-291
- 全文大小：2050 K
文摘
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We proposed a facile and low-cost method to fabricate complementary circuits.
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The used method was based on the selection of the solvent for the dielectric layer.
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The best OFET performance was reached when an orthogonal solvent was used.
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This method allows to improve and to tune the performance of p- and n-channel OFETs.
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Organic complementary circuits were obtained with promising characteristics.