Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs

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• 作者：Dmitri Osintsev ; Oskar Baumgartner ; Zlatan Stanojevic ; Viktor Sverdlov ; Siegfried Selberherr
• 关键词：Thin silicon films ; Spin relaxation ; k  ; · ;   ; p model ; Shear strain
• 刊名：Solid-State Electronics
• 出版年：December, 2013
• 年：2013
• 卷：90
• 期：Complete
• 页码：34-38
• 全文大小：838 K

文摘

Properties of semiconductors provided by the electron spin are of broad interest because of their potential for future spin-driven microelectronic devices. Silicon is the main element of modern charge-based electronics, thus, understanding the details of the spin propagation in silicon structures is key for novel spin-based device application. We use a generalized perturbative k 路 p approach to take the spin degree of freedom into consideration. We investigate (0 0 1) oriented SOI films for various parameters including the film thickness, the band offset, and strain. We demonstrate that shear strain dramatically influences the intersubband spin relaxation matrix elements opening a new opportunity to boost spin lifetime in SOI MOSFETs.