Arsenic clustering during formation of the transient Ni silicide
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- 作者：K. Hoummada<sup>asup><sup> ; sup><sup>khalid.hoummada@im2np.frsup> ; G. Tellouche<sup>csup> ; I.D. Blum<sup>asup><sup> ; sup><sup>bsup> ; A. Portavoce<sup>asup><sup> ; sup><sup>bsup> ; D. Mangelinck<sup>asup><sup> ; sup><sup>bsup>
- 关键词：Silicides ; Three-dimensional atom probe (3DAP) ; Diffusion ; Interfaces ; Thin films
- 刊名：Scripta Materialia
- 出版年：2012
- 出版时间：July, 2012
- 年：2012
- 卷：67
- 期：2
- 页码：169-172
- 全文大小：502 K
文摘
The redistribution of arsenic during the reaction of Ni thin films with arsenic-doped Si(1 0 0) substrates is studied by in situ X-ray diffraction (XRD) and atom probe tomography. In situ XRD showed the formation of a transient phase that forms isolated grains at the ¦Ä-Ni<sub>2sub>Si/Si interface. Arsenic is not incorporated in ¦Ä-Ni<sub>2sub>Si but accumulates at the ¦Ä-Ni<sub>2sub>Si/Si interface. Clusters containing 10 at. % As are present only in the transient phase. The As clustering might have important consequences for devices.