Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer
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- 作者：Mike El Kousseifi<sup>asup> ; Khalid Hoummada<sup>asup><sup> ; sup><sup>khalid.hoummada@im2np.fr" class="auth_mail" title="E-mail the corresponding authorsup> ; Maxime Bertoglio<sup>bsup> ; Dominique Mangelinck<sup>bsup>
- 关键词：Ni silicide ; Intermixed layer ; Phase formation sequence ; Atom probe tomography ; And nucleation
- 刊名：Acta Materialia
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：106
- 期：Complete
- 页码：193-198
- 全文大小：1971 K
文摘
During the deposition of a Ni film on a Si substrate, an intermixed layer usually forms at the Ni/Si interface. In this work, the influence of Pt incorporation in this intermixed layer on the phase formation sequence and especially on the first phase formation is studied by in situ-XRD measurements and atom probe tomography (APT). Four different samples were elaborated where the intermixed layer was modified by deposition of a 3 nm of Ni or Ni(10 at% Pt) on the Si substrate prior to the deposition of Ni(10 at%Pt) or Ni film respectively. These results show that the formation of the first phase changes between δ-Ni<sub>2sub>Si and θ-Ni<sub>2sub>Si depending on the Pt concentration integrated in the intermixed layer. Using this selection method to control the formation of the first phase, can impact the self-aligned silicide process used by the industry.