Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices
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- 作者：K. Adokanoua ; b ; kokou.adokanou@mines-paristech.fr" class="auth_mail" title="E-mail the corresponding author ; K. Inala ; P. Montmitonneta ; F. Pressecqb ; B. Bonnetc ; J.-L. Muraroc
- 关键词：Bending ; Uniform in-plane stress ; Microwave ; Gallium Arsenide ; Piezoelectric effect ; Packaging ; Reliability
- 刊名：Microelectronics Reliability
- 出版年：2015
- 出版时间：August-September 2015
- 年：2015
- 卷：55
- 期：9-10
- 页码：1697-1702
- 全文大小：1187 K
文摘
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Study of mechanical stress influence on GaAs transistor DC characteristics
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Simple bending system by buckling, easily portable under characterization systems
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Mechanical external stress has been applied from -210 MPa to 210 MPa and has been evaluated with Abaqus standard ®
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Step up measurement has been calibrated with and without applied stress
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Threshold voltage and current are given as functions of applied mechanical stress