Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

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• 作者：Sang-Moo Park ; Tomoaki Ikegami ; Kenji Ebihara ; Paik-Kyun Shin
• 关键词：ZnO ; XPS ; Electric and optical properties ; TCO ; PLD
• 刊名：Applied Surface Science
• 出版年：2006
• 出版时间：30 November 2006
• 年：2006
• 卷：253
• 期：3
• 页码：1522-1527
• 全文大小：983 K

文摘

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10⁻⁴ Ω cm, Ga-doped ZnO = 8.12 × 10⁻⁵ Ω cm) was obtained on the ZnO film prepared at pO₂ = 5 mTorr and T_s = 300 °C.