文摘
Hyper-Raman scattering (HRS) of light from the inhomogeneous surface region of a semiconductor is considered theoretically. The HRS enhancement factor induced by band-bending inhomogeneities in a heavily doped, degenerate semiconductor is evaluated. It is argued that such enhancement effects can be exploited for special applications, e.g., for a micro-HRS induced by a metal tip on a semiconductor surface.