Intersubband absorption coefficients of GaN/AlN and strain-compensated InGaN/InAlN quantum well structures

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• 作者：Seoung-Hwan Park^a ; ^{shpark102@gmail.com} ; Doyeol Ahn^b ; ^c ; Chan-Yong Park^d
• 关键词：Photodetector ; Intersubband ; GaN ; InGaN ; InAlN
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：508-513
• 全文大小：488 K
• 卷排序：100

文摘

The absorption coefficient of the InGaN/InAlN QW system is four times larger than that of the GaN/AlN QW system. The strain (0.3%) in the InGaN/InAlN system is greatly reduced. The InGaN/InAlN QW system can be used as intersubband photodetectors for telecommunication with a higher absorption coefficient.