Surface patterning in GeSe amorphous layers

详细信息    查看全文

• 作者：I. Csarnovics^a ; ^{csarnovics.istvan@science.unideb.hu} ; M. Veres^b ; P. Nemec^c ; M.R. Latif^d ; P. Hawlova^c ; S. Molnar^a ; S. Kokenyesi^e
• 关键词：Amorphous chalcogenides ; GeSe system ; Thin films ; Light induced surface patterning ; Raman spectroscopy ; Atomic force microscopy
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：51-56
• 全文大小：747 K
• 卷排序：459

文摘

Laser-induced surface relief patterns were performed in GeSe amorphous layers. Compositional and fabrication method dependences on recording were established. Modulation depth of the created structures increases with increasing Se content. Advantage of pulsed laser deposition in comparison to thermal evaporation is shown. Thermal annealing has essential influence on the pattering parameters.