Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
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- 作者：Fang-Wei Leea ; Wen-Cheng Keb ; wcke@mail.ntust.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Chun-Hong Chenga ; Bo-Wei Liaoa ; Wei-Kuo Chena
- 关键词：GaN ; Nanoscale-patterned sapphire substrate ; Aspect ratio ; Anodic aluminum oxide
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：375
- 期：Complete
- 页码：223-229
- 全文大小：1823 K
文摘
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Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask.
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Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied.
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Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS.