Influence of post-synthesis annealing on PbS quantum dot solar cells

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• 作者：Haowei Wang^a ; Shengyi Yang^b ; ^c ; ^{syyang@bit.edu.cn} ; Yishan Wang^b ; Junfeng Xu^d ; Yueli Huang^b ; Weile Li^b ; Bo He^d ; Sulaman Muhammad^b ; Yurong Jiang^d ; Yi Tang^d ; Bingsuo Zou^b
• 关键词：Colloidal quantum dots (CQDs) ; Power conversion efficiency (PCE) ; Lead sulphide (PbS) ; Post-synthesis annealing treatment ; QDs-based solar cells (QDSCs)
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：42
• 期：Complete
• 页码：309-315
• 全文大小：1049 K
• 卷排序：42

文摘

Influence of post-synthesis annealing on PbS QDs Solar Cells is presented. Optimal device performance can be achieved at the annealing temperature of 140 °C. A maximum efficiency of 8.18% from QDSC ITO/ZnO/PbS/Au is obtained. The mechanisms underneath for the enhanced performance are discussed in details.